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| Preliminary GS8160xxBT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp Features * FT pin for user-configurable flow through or pipeline operation * Single Cycle Deselect (SCD) operation * 1.8 V or 2.5 V core power supply * 1.8 V or 2.5 V I/O supply * LBO pin for Linear or Interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Default to Interleaved Pipeline mode * Byte Write (BW) and/or Global Write (GW) operation * Internal self-timed write cycle * Automatic power-down for portable applications * JEDEC-standard 100-lead TQFP package * RoHS-compliant 100-lead TQFP package available 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 250 MHz-150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the risingedge-triggered Data Output Register. Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS8160xxBT-xxxV operates on a 1.8 V or 2.5 V power supply. All inputs are 1.8 V or 2.5 V compatible. Separate output power (VDDQ) pins are used to decouple output noise from the internal circuits and are 1.8 V or 2.5 V compatible. Functional Description Applications The GS8160xxBT-xxxV is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Controls Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst Parameter Synopsis -250 Pipeline 3-1-1-1 tKQ tCycle Curr (x18) Curr (x32/x36) tKQ tCycle Curr (x18) Curr (x32/x36) 3.0 4.0 280 330 5.5 5.5 210 240 -200 3.0 5.0 230 270 6.5 6.5 185 205 -150 3.8 6.7 185 210 7.5 7.5 170 190 Unit ns ns mA mA ns ns mA mA Flow Through 2-1-1-1 Rev: 1.01 5/2006 1/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV GS816018BT-xxxV 100-Pin TQFP Pinout VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB FT VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 1M x 18 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 NC NC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC Rev: 1.01 5/2006 LBO A A A A A1 A0 NC NC VSS VDD A A A A A A A A A 2/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV GS816032BT-xxxV 100-Pin TQFP Pinout NC DQC DQC VDDQ VSS DQC DQC DQC DQC VSS VDDQ DQC DQC FT VDD NC VSS DQD DQD VDDQ VSS DQD DQD DQD DQD VSS VDDQ DQD DQD NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 512K x 32 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 BD BC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A NC DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA NC Rev: 1.01 5/2006 LBO A A A A A1 A0 NC NC VSS VDD A A A A A A A A A 3/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV GS816036BT-xxxV 100-Pin TQFP Pinout DQPC DQC DQC VDDQ VSS DQC DQC DQC DQC VSS VDDQ DQC DQC FT VDD NC VSS DQD DQD VDDQ VSS DQD DQD DQD DQD VSS VDDQ DQD DQD DQPD 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 512K x 36 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 BD BC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQPA Rev: 1.01 5/2006 LBO A A A A A1 A0 NC NC VSS VDD A A A A A A A A A 4/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV TQFP Pin Description Symbol A0, A1 A DQA DQB DQC DQD NC BW BA, BB, BC, BD CK GW E1, E3 E2 G ADV ADSP, ADSC ZZ FT LBO VDD VSS VDDQ I I I I I I I I I I I I I I I Type I I I/O Description Address field LSBs and Address Counter preset Inputs Address Inputs Data Input and Output pins No Connect Byte Write--Writes all enabled bytes; active low Byte Write Enable for DQA, DQB Data I/Os; active low Clock Input Signal; active high Global Write Enable--Writes all bytes; active low Chip Enable; active low Chip Enable; active high Output Enable; active low Burst address counter advance enable; active low Address Strobe (Processor, Cache Controller); active low Sleep Mode control; active high Flow Through or Pipeline mode; active low Linear Burst Order mode; active low Core power supply I/O and Core Ground Output driver power supply Rev: 1.01 5/2006 5/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV GS8160xxB-xxxV Block Diagram Register A0-An D Q A0 D0 A1 Q0 D1 Q1 Counter Load A0 A1 A LBO ADV CK ADSC ADSP GW BW BA Register Memory Array Q D Q D Register D BB Q 36 4 36 Register D BC Q Q Register D Register Q Register D D BD Q Register D Q E1 E2 E3 Register D Q Register D Q FT G Power Down Control ZZ DCD=1 DQx1-DQx9 Note: Only x36 version shown for simplicity. Rev: 1.01 5/2006 6/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Pin Name LBO FT ZZ State L H L H or NC L or NC H Function Linear Burst Interleaved Burst Flow Through Pipeline Active Standby, IDD = ISB Note: There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above table. Burst Counter Sequences Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Rev: 1.01 5/2006 7/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Byte Write Truth Table Function Read Read Write byte a Write byte b Write byte c Write byte d Write all bytes Write all bytes GW H H H H H H H L BW H L L L L L L X BA X H L H H H L X BB X H H L H H L X BC X H H H L H L X BD X H H H H L L X Notes 1 1 2, 3 2, 3 2, 3, 4 2, 3, 4 2, 3, 4 Notes: 1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs. 2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes. 3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. 4. Bytes "C" and "D" are only available on the x32 and x36 versions. Rev: 1.01 5/2006 8/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Synchronous Truth Table Operation Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Address Used None None None External External External Next Next Next Next Current Current Current State Diagram Key5 X X X R R W CR CR CW CW E1 H L L L L L X H X H X H X E2 X F F T T T X X X X X X X ADSP ADSC X L H L H H H X H X H X H L X L X L L H H H H H H H ADV X X X X X X L L L L H H H W3 X X X X F T F F T T F F T DQ4 High-Z High-Z High-Z Q Q D Q Q D D Q Q D Write Cycle, Suspend Burst Current H X X H H T D Notes: 1. X = Don't Care, H = High, L = Low 2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1 3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding. 4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as "Q" in the Truth Table above). 5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity. 6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. 7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above. Rev: 1.01 5/2006 9/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Simplified State Diagram X Deselect W W Simple Synchronous Operation R R X CW First Write R CR First Read X CR Simple Burst Synchronous Operation W R X Burst Write CR CW R Burst Read X CR Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and that ADSP is tied high and ADSC is tied low. 3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and assumes ADSP is tied high and ADV is tied low. Rev: 1.01 5/2006 10/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Simplified State Diagram with G X Deselect W W X W CW R R First Write R CR First Read X CR CW W X Burst Write R CR W CW R X Burst Read CW CR Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of "Dummy Reads" (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles. 3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM's drivers off and for incoming data to meet Data Input Set Up Time. Rev: 1.01 5/2006 11/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Absolute Maximum Ratings (All voltages reference to VSS) Symbol VDD VDDQ VI/O VIN IIN IOUT PD TSTG TBIAS Description Voltage on VDD Pins Voltage on VDDQ Pins Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Package Power Dissipation Storage Temperature Temperature Under Bias Value -0.5 to 4.6 -0.5 to VDD -0.5 to VDDQ +0.5 ( 4.6 V max.) -0.5 to VDD +0.5 ( 4.6 V max.) +/-20 +/-20 1.5 -55 to 125 -55 to 125 Unit V V V V mA mA W o o C C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges (1.8 V/2.5 V Version) Parameter 1.8 V Supply Voltage 2.5 V Supply Voltage 1.8 V VDDQ I/O Supply Voltage 2.5 V VDDQ I/O Supply Voltage Symbol VDD1 VDD2 VDDQ1 VDDQ2 Min. 1.7 2.3 1.7 2.3 Typ. 1.8 2.5 1.8 2.5 Max. 2.0 2.7 VDD VDD Unit V V V V Notes Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.01 5/2006 12/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV VDDQ2 & VDDQ1 Range Logic Levels Parameter VDD Input High Voltage VDD Input Low Voltage Symbol VIH VIL Min. 0.6*VDD -0.3 Typ. -- -- Max. VDD + 0.3 0.3*VDD Unit V V Notes 1 1 Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Recommended Operating Temperatures Parameter Ambient Temperature (Commercial Range Versions) Ambient Temperature (Industrial Range Versions) Symbol TA TA Min. 0 -40 Typ. 25 25 Max. 70 85 Unit C C Notes 2 2 Notes: 1. The part numbers of Industrial Temperature Range versions end the character "I". Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be -2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Undershoot Measurement and Timing VIH Overshoot Measurement and Timing 20% tKC VDD + 2.0 V VSS 50% VSS - 2.0 V 20% tKC 50% VDD VIL Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Input Capacitance Input/Output Capacitance Note: These parameters are sample tested. Symbol CIN CI/O Test conditions VIN = 0 V VOUT = 0 V Typ. 4 6 Max. 5 7 Unit pF pF Rev: 1.01 5/2006 13/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Conditions VDD - 0.2 V 0.2 V 1 V/ns VDD/2 VDDQ/2 Fig. 1 VDDQ/2 * Distributed Test Jig Capacitance Figure 1 Output Load 1 DQ 50 30pF* Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) FT, ZZ Input Current Output Leakage Current Symbol IIL IIN IOL Test Conditions VIN = 0 to VDD VDD VIN 0 V Output Disable, VOUT = 0 to VDD Min -1 uA -100 uA -1 uA Max 1 uA 100 uA 1 uA DC Output Characteristics (1.8 V/2.5 V Version) Parameter 1.8 V Output High Voltage 2.5 V Output High Voltage 1.8 V Output Low Voltage 2.5 V Output Low Voltage Symbol VOH1 VOH2 VOL1 VOL2 Test Conditions IOH = -4 mA, VDDQ = 1.6 V IOH = -8 mA, VDDQ = 2.375 V IOL = 4 mA IOL = 8 mA Min VDDQ - 0.4 V 1.7 V -- -- Max -- -- 0.4 V 0.4 V Rev: 1.01 5/2006 14/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Operating Currents -250 Parameter Test Conditions Mode Symbol 0 to 70C 290 40 220 20 260 20 200 10 40 40 85 60 -200 -40 to 85C 300 40 230 20 270 20 210 10 50 50 90 65 -150 -40 to 85C 250 30 200 15 225 15 185 10 50 50 80 55 0 to 70C 240 30 190 15 215 15 175 10 40 40 75 50 0 to 70C 190 20 175 15 170 15 160 10 40 40 60 50 -40 to 85C 200 20 185 15 180 15 170 10 50 50 65 55 Unit Operating Current Device Selected; All other inputs VIH or VIL Output open (x32/ x36) Pipeline Flow Through Pipeline IDD IDDQ IDD IDDQ IDD IDDQ IDD IDDQ ISB ISB IDD IDD mA mA mA mA mA mA mA mA (x18) Flow Through Standby Current Deselect Current ZZ VDD - 0.2 V Device Deselected; All other inputs VIH or VIL Pipeline Flow Through Pipeline -- Flow Through -- Notes: 1. IDD and IDDQ apply to any combination of VDD and VDDQ operation. 2. All parameters listed are worst case scenario. Rev: 1.01 5/2006 15/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV AC Electrical Characteristics Parameter Clock Cycle Time Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to Output Valid G to output in Low-Z G to output in High-Z ZZ setup time ZZ hold time ZZ recovery Symbol tKC tKQ tKQX tLZ1 tS tH tKC tKQ tKQX tLZ tS tH tKH tKL tHZ1 tOE tOLZ1 tOHZ1 tZZS2 tZZH2 tZZR 1 -250 Min 4.0 -- 1.5 1.5 1.4 0.2 5.5 -- 2.0 2.0 1.5 0.5 1.3 1.7 1.5 -- 0 -- 5 1 20 Max -- 3.0 -- -- -- -- -- 5.5 -- -- -- -- -- -- 2.5 2.5 -- 2.5 -- -- -- Min 5.0 -- 1.5 1.5 1.4 0.4 6.5 -- 2.0 2.0 1.5 0.5 1.3 1.7 1.5 -- 0 -- 5 1 20 -200 Max -- 3.0 -- -- -- -- -- 6.5 -- -- -- -- -- -- 3.0 3.0 -- 3.0 -- -- -- Min 6.7 -- 1.5 1.5 1.5 0.5 7.5 -- 2.0 2.0 1.5 0.5 1.5 1.7 1.5 -- 0 -- 5 1 20 -150 Max -- 3.8 -- -- -- -- -- 7.5 -- -- -- -- -- -- 3.0 3.8 -- 3.8 -- -- -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Pipeline Flow Through Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.01 5/2006 16/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Pipeline Mode Timing Begin Read A Cont Cont Deselect Write B Single Write tKL tKH tKC Read C Read C+1 Read C+2 Read C+3 Cont Burst Read Deselect Single Read CK ADSP tS tH ADSC tS ADV tS tH A0-An A B C ADSC initiated read tH tS GW tS BW tH tS Ba-Bd tS tH E1 tS tH E2 tS tH E3 G tS tOE DQa-DQd tOHZ Q(A) D(B) E2 and E3 only sampled with ADSP and ADSC E1 masks ADSP Deselected with E1 tH tKQ tH tLZ Q(C) Q(C+1) Q(C+2) tKQX tHZ Q(C+3) Rev: 1.01 5/2006 17/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Flow Through Mode Timing Begin Read A Cont tKL tKH Cont tKC Write B Read C Read C+1 Read C+2 Read C+3 Read C Cont Deselect CK ADSP tS tH ADSC tS tH ADV tS tH A0-An A B C Fixed High tS tH ADSC initiated read tS tH GW tS tH BW tS tH Ba-Bd tS tH E1 tS tH E2 tS tH E3 G tH tS tOE DQa-DQd Q(A) Deselected with E1 E2 and E3 only sampled with ADSC tOHZ D(B) tKQ tLZ Q(C) Q(C+1) Q(C+2) Q(C+3) Q(C) tHZ tKQX Rev: 1.01 5/2006 18/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after ZZ recovery time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode. Sleep Mode Timing tKH tKC CK Setup Hold ADSP ADSC tZZR tZZS ZZ tZZH tKL Application Tips Single and Dual Cycle Deselect SCD devices (like this one) force the use of "dummy read cycles" (read cycles that are launched normally but that are ended with the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention. Rev: 1.01 5/2006 19/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV TQFP Package Drawing (Package T) L Symbol A1 A2 b c D D1 E E1 e L L1 Y c Pin 1 Description Standoff Body Thickness Lead Width Lead Thickness Terminal Dimension Package Body Terminal Dimension Package Body Lead Pitch Foot Length Lead Length Coplanarity Lead Angle Min. Nom. Max 0.05 1.35 0.20 0.09 21.9 19.9 15.9 13.9 -- 0.45 -- 0.10 1.40 0.30 -- 22.0 20.0 16.0 14.0 0.65 0.60 1.00 0.15 1.45 0.40 0.20 22.1 20.1 16.1 14.1 -- 0.75 -- 0.10 L1 e b D D1 A1 Y A2 E1 E 0 -- 7 Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. Rev: 1.01 5/2006 20/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Ordering Information for GSI Synchronous Burst RAMs Org 1M x 18 1M x 18 1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36 512K x 36 1M x 18 1M x 18 1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36 512K x 36 1M x 18 1M x 18 1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36 512K x 36 1M x 18 Part Number1 GS816018BT-250V GS816018BT-200V GS816018BT-150V GS816032BT-250V GS816032BT-200V GS816032BT-150V GS816036BT-250V GS816036BT-200V GS816036BT-150V GS816018BT-250IV GS816018BT-200IV GS816018BT-150IV GS816032BT-250IV GS816032BT-200IV GS816032BT-150IV GS816036BT-250IV GS816036BT-200IV GS816036BT-150IV GS816018BGT-250V GS816018BGT-200V GS816018BGT-150V GS816032BGT-250V GS816032BGT-200V GS816032BGT-150V GS816036BGT-250V GS816036BGT-200V GS816036BGT-150V GS816018BGT-250IV Type Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Voltage Option 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V Package TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP Speed2 (MHz/ns) 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 TA3 Status4 C C C C C C C C C I I I I I I I I I C C C C C C C C C I MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP MP PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ 1M x 18 GS816018BGT-200IV Synchronous Burst 1.8 V or 2.5 V RoHS-compliant TQFP 200/6.5 I PQ Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS816018BT-150IvT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. MP = Mass Production. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.01 5/2006 21/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV Ordering Information for GSI Synchronous Burst RAMs (Continued) Org 1M x 18 512K x 32 512K x 32 512K x 32 512K x 36 512K x 36 Part Number1 GS816018BGT-150IV GS816032BGT-250IV GS816032BGT-200IV GS816032BGT-150IV GS816036BGT-250IV GS816036BGT-200IV Type Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Synchronous Burst Voltage Option 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V Package RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP Speed2 (MHz/ns) 150/7.5 250/5.5 200/6.5 150/7.5 250/5.5 200/6.5 TA3 Status4 I I I I I I PQ PQ PQ PQ PQ PQ 512K x 36 GS816036BGT-150IV Synchronous Burst 1.8 V or 2.5 V RoHS-compliant TQFP 150/7.5 I PQ Notes: 1. Customers requiring delivery in Tape and Reel should add the character "T" to the end of the part number. Example: GS816018BT-150IvT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. MP = Mass Production. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.01 5/2006 22/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8160xxBT-xxxV 18Mb Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; New 8160VxxB_r1 8160VxxB_r1; 8160xx-xxxV_r1_01 Content Types of Changes Format or Content Page;Revisions;Reason * Creation of new datasheet * Change part numbering due to nomenclature change Rev: 1.01 5/2006 23/23 (c) 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. |
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